Fig. 5: Two-electrode electrochemical gating approach for the foldamers and suspending conductance measurement of f-Fu and f-Th in PC.
From: In-situ electro-responsive through-space coupling enabling foldamers as volatile memory elements
a Schematic illustration of two-electrode electrochemical gating measurement in PC with 50 mM TBAPF6. The inset is energy level diagram and molecular transmission when the tip is biased negatively relative to the substrate. 1D histograms for (b) HC and (c) LC states of f-Fu performed by two-electrode electrochemical gating experiments at different biases. d Statistic conductance data of f-Fu, f-Th and f-Ph under different applied biases in electrochemical gating measurement with labeled switching ratios (f) at −0.5 V. e 2D conductance−displacement histograms of the LC states of f-Fu with visualized conductance rebound process. f 2D conductance−displacement histograms of the HC states of f-Fu. g 2D conductance−displacement histograms of the HC states of f-Th with drastic conductance drop. h 2D conductance−displacement histograms of the HC states of f-Th. The black lines refer to fitting curves of conductance.
