Fig. 2: Electrical properties of V-EGT. | Nature Communications

Fig. 2: Electrical properties of V-EGT.

From: A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing

Fig. 2: Electrical properties of V-EGT.The alternative text for this image may have been generated using AI.

a, b Schematic diagram of the electrical testing setup for V-EGT. The scale bars in (a and b) are 100 nm and 50 µm, respectively. c Current response of V-EGT under voltage pulses, showing hybrid short-term memory (STM) and long-term memory (LTM) with the former dominated. d Equivalent circuit diagram of the EGT gate-source circuit. In the intervals between gate pulses, EGT discharges along the original charging path, as indicated by the red arrow. The discharge time constant (τRC = R × C) is an indicator of EGT retention. e The discharge time constant of Li-ion based EGTs in series with electronic switches decreased with decreasing channel area. f, g Current-time response of V-EGTs under different voltage pulse amplitudes (f) and widths (g). h, i Analysis for the pulse intensity (amplitude (h) and width (i)) dependence of STM and LTM of V-EGT.

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