Fig. 2: Dielectric properties for 2D oxide insulators/semiconductors. | Nature Communications

Fig. 2: Dielectric properties for 2D oxide insulators/semiconductors.

From: Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson’s ratios

Fig. 2

a In-plane (‖) and out-of-plane (⊥) static dielectric constants, κ. b κ versus band gap (Eg). Each point is color-coded according to the figure-of-merit, Eg•κ. GeO2 (101) appears as the most promising predicted material. c Comparison diagram for total density of states (TDOS) of Ge in the middle layer (ML) and Ge in the edge layer (EL). The inset shows the crystal structure of GeO2 (101). Projected density of states (PDOS) for d GeO2 (101), e Fe2O3 (101), f WO3 (110), and g RhO2 (110) monolayers show strong cross-gap hybridization between the O p valence bands and the corresponding metal conduction bands. Inset in d: Comparison for TDOS of 2D and bulk GeO2.

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