Fig. 4: 2D GeO2/TMDs hetero-bilayers (HBLs). | Nature Communications

Fig. 4: 2D GeO2/TMDs hetero-bilayers (HBLs).

From: Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson’s ratios

Fig. 4

Side and top views of a GeO2/MoX2 (X = S, Se) and b GeO2/HfX2 (X = S, Se), where the interfacial distance d0 between GeO2 and TMD is marked. Projected band structures of c GeO2/MoS2, e GeO2/HfS2, g GeO2/MoSe2 and i GeO2 /HfSe2 HBLs, where the high symmetry K-points are indicated by the vertical dashed lines. d, f, h, j The band alignment of the GeO2 and corresponding TMD monolayer before and after forming HBLs, where Fermi level is marked by the horizontal dashed line, and Evac denotes vacuum level. It is easily seen that GeO2 forms type-I HBLs with MoS2, MoSe2 and HfSe2. Among them, type-I GeO2/MoSe2 and GeO2/HfSe2 HBLs with band offset of ~1 eV for both CBs and VBs are highly promising for FET applications.

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