Fig. 2: Localized IXs (type-i IXs) in the weak excitation regime. | Nature Communications

Fig. 2: Localized IXs (type-i IXs) in the weak excitation regime.

From: Localization and interaction of interlayer excitons in MoSe2/WSe2 heterobilayers

Fig. 2: Localized IXs (type-i IXs) in the weak excitation regime.The alternative text for this image may have been generated using AI.

a PL map with a pump power of 33 nW and at 4.9 K. The right panel shows the PL spectrum of sharp emission lines (denoted as type-i emission). The integrated PL intensity of a sharp emission line in dependence on pump power is fitted with the formula \(I={I}_{\max }/(1+{P}_{{{{{{{{\rm{sat}}}}}}}}}/P)\), where Psat ~ 0.91 μW is the saturation power. b Valley polarization measurement of the type-i emission. c Power-dependent PL spectrum. d PL spectrum in dependence on temperature with a pump power of 33 nW revealing two types of localized IXs. The inset shows the temperature-dependent PL intensity of two localized IX, where the integrated PL intensity of type-i IXs is fitted by an Arrhenius equation.

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