Fig. 5: Generality of the high-temperature annealing method for fabricating dual-mode bias-switchable OPDs. | Nature Communications

Fig. 5: Generality of the high-temperature annealing method for fabricating dual-mode bias-switchable OPDs.

From: Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes

Fig. 5: Generality of the high-temperature annealing method for fabricating dual-mode bias-switchable OPDs.The alternative text for this image may have been generated using AI.

Performance of the dual-mode OPDs based on PM6:Y6 and PBDB-T:ITIC-Th BHJ active layers, and the BHJ films were annealed at 250 °C for 60 and 30 min, respectively. a, d Energy level diagrams of the OPDs. b, e J–V curves in dark and under illumination. c, f EQE spectra of the devices under different biases. It can be observed that the operating mode of the PM6:Y6 and PBDB-T:ITIC-Th OPDs can also be switched by the bias direction.

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