Fig. 4: Schematics of the relationship between two AF domains and electronic states.
From: Antiferromagnetic topological insulator with selectively gapped Dirac cones
a, b ARPES intensity around the \(\bar{\Gamma }\) and \(\bar{{{{{{\rm{M}}}}}}}\) points, respectively, for domain A. Inset to b shows the near-EF ARPES intensity along a k cut shown by the red line. c, d Same as (a, b) but for domain B. e, f Schematics of the influence of AF structure to the folding of FS and band dispersion for domains A and B, respectively. GAF is a reciprocal lattice vector of magnetic BZ for each domain. Red, blue, and black curves represent energy bands for bulk hole, bulk electron, and surface bands, respectively. g, h AF structure for domains A and B, respectively. Translation vector D inverting the spin direction is indicated by the green arrow in (h). i, j Corresponding schematic band dispersion of Dirac-cone bands for domains A and B, respectively.
