Fig. 4: Benchmarking PCM technologies.
From: Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory
a Resistance drift coefficient vs. reset energy, and b endurance vs. reset energy. Block arrows point to the desirable “best corners” with low resistance drift, high endurance, and low reset energy. Our GST467 nanocomposite-superlattice devices display some of the best overall characteristics, compared to all other existing PCMs10,18,21,23,26,50,51,52,53,54. The reset energy in our work (red filled star) is limited by our ~20 ns pulse width and instrumentation,12,40 which are not fundamental limits13,50. With 2 ns pulse widths50 the reset energy of our 40 nm superlattice PCM is projected (hollow red star) to reach ≈ 0.15 pJ. GST-based PCM with carbon nanotube (CNT) electrodes ( ≈ 1.7 nm diameter18) shows comparable reset energy to our superlattice PCM ( ≈ 40 nm diameter), but devices with CNT electrodes have limited endurance and high resistance drift (blue circles). This also shows that our reset energy can be reduced further, by decreasing the BE diameter. c Set pulse time vs. set voltage. The block arrow points to the desirable “best corner” with low set voltage and short set pulse time. Our GST467 nanocomposite-superlattice PCM is located near the best corner, compared to other existing PCMs10,12,21,23,54,55. To simplify notation, GST refers to the GST225 stoichiometry in the entire figure.
