Fig. 3: Characterizations of digital RRAM-based TCAM array. | Nature Communications

Fig. 3: Characterizations of digital RRAM-based TCAM array.

From: Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning

Fig. 3: Characterizations of digital RRAM-based TCAM array.The alternative text for this image may have been generated using AI.

a False-color SEM image of a 1\(\times\)5 2T2R TCAM array fabricated with CNTFET and Ta2O5-based digital RRAM. Scale bar: 50 μm. b Illustration of Hamming distance calculation using 2T2R TCAM. c The discharging waveform of ML as a function of the number of mismatched bits Nmis (from 0 to 5). d Ηistogram of τ measured from 100 2T2R TCAM arrays with 1-bit mismatch (Nmis=1). e Fitting of the measured τ versus Nmis. The purple dots are the experimental data measured from 5 TCAM arrays. Inset: τ−1 exhibits a linear dependence on Nmis. f Hamming distance (predicted) calculated by TCAM as a function of the actual Hamming distance (expected). The blue line plots the linear fitting with a small R-square of 0.9996, demonstrating proper function of Hamming distance calculation.

Back to article page