Fig. 2: CPL-dependent charge transfer dynamics and storage.
From: Circular polarization-resolved ultraviolet photonic artificial synapse based on chiral perovskite
a Schematic illustration of carrier dynamics in H-PVK/SWNTs heterojunction. CB, conduction band; VB, valence band. b, c Optimized interfacial structures, and corresponding PDOS of 1D-S/SWNTs. CBM, conduction band minimum; VBM, valence band maximum. The arrow indicates the photoexcited hole transfer from VBM of H-PVK to HOMO level of SWNTs. d Pseudo-colour plot of TA spectra of H-PVK and 1D-S/SWNTs measured under 340 nm LCP excitation. e Band edge ground-state bleaching (GSB) dynamics of 1D-S and 1D-S/SWNTs under 340 nm LCP/RCP excitation. f Band structure variations versus CPL illumination time of H-PVK (upper panel) and H-PVK/SWNTs (lower panel). g Laser spike-numbers dependent change of TA signal amplitudes probed at ~1050 nm and 1 ps of SWNTs (upper panel) and 1D-S/SWNTs (lower panel) under 340 nm LCP/RCP excitation.
