Fig. 2: Fabricated filamentary memristor and phase-change memory based array die. | Nature Communications

Fig. 2: Fabricated filamentary memristor and phase-change memory based array die.

From: Bringing uncertainty quantification to the extreme-edge with memristor-based Bayesian neural networks

Fig. 2

a Transmission electron microscopy image of a phase-change memory in the back end of line of our hybrid memristor/CMOS process. b Transmission electron microscopy image of a phase-change memory. c Optical microscopy photograph of the phase-change memory-based 1T1R array. d Transmission electron microscopy image of a filamentary memristor in the back end of line of our hybrid memristor/CMOS process. e Transmission electron microscopy image of a filamentary memristor. f Optical microscopy photograph of the filamentary memristor-based 1T1R array.

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