Fig. 3: The measured crosstalk suppression of the carrier extraction structure (CES) between the nearest neighbor pixels at a temperature (T) of 300 K.
a Top view of the nearest neighbor pixels in the array has a 100 μm pixel pitch but without CES (left), has a 100 μm pixel pitch and with CES (middle), has a 50 μm pixel pitch and with CES (right). The CES diffusion window width (D) is 2 μm. b−d Measured crosstalk suppression of the CES in the array with 100 μm pixel pitch. b Measured current-voltage (I-V) characteristics and gain voltage (M-V) characteristics of the detector, when the emitter avalanched at a constant current of 300 μA and the CES is biased at 0 V (Vces = 0 V). Iv1 (solid line) and Iv2 (dotted line) represent the crosstalk current of the array without and with CES, respectively. c The relationship between the number of carriers collected by the detector (Ncrosstalk) and the emitter working current, when the detector was operated in Linear mode. d The relationship between the crosstalk counts and the emitter working current, when the detector was operated at 0.5 V excess voltage (Vex_D). The error bar represents the fluctuation in counts between repeated tests. e-f Measured results in the array with 50 μm pixel pitch. e The unit pixel’s dark I-V characteristics when the Vces is from 0 V to 30 V. A Vces exceeding 10 V is required to ensure the pixel and the CES work independently because of the close spacing between them. f Measured I-V characteristics of the detector in arrays without (solid lines) and with (dotted lines) CES, when the emitter avalanched at 1000 μA constant current.
