Fig. 2: As2S3 waveguide fabrication and Si-As2S3 interface simulation. | Nature Communications

Fig. 2: As2S3 waveguide fabrication and Si-As2S3 interface simulation.

From: Integrated microwave photonic notch filter using a heterogeneously integrated Brillouin and active-silicon photonic circuit

Fig. 2

a False-coloured scanning electron microscope (SEM) image of the silicon waveguide taper after the SiO2 cladding was removed using HF etching. b False-coloured optical microscope image of the silicon taper after photoresist is patterned. c False-coloured SEM image of the Si waveguide tip and As2S3 waveguide. d False-coloured SEM image of the As2S3 rib waveguide cross-section. e True-coloured photograph of the Si-As2S3 taper region after fabrication is complete. f Simulated electric field magnitude (∣E∣) of the TE00 mode profile for the silicon waveguide. g Simulated ∣E∣ of the TE00 mode profile for the As2S3 rib waveguide. The mode profiles were simulated using Lumerical Finite Difference Eigenmode (FDE) solver. h Simulated ∣E∣ through the Si taper into the As2S3 waveguide, simulated using Lumerical Eigenmode Expansion (EME) solver. The labelled critical dimensions have values wSi = 450 nm, hSi = 220 nm, ltaper = 100 μm, wtip = 150 nm, hchg = 680 nm, hetch = 340 nm, wchg = 1800 nm.

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