Fig. 4: Surface potential measurement by KFM. | Nature Communications

Fig. 4: Surface potential measurement by KFM.

From: 3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination

Fig. 4: Surface potential measurement by KFM.The alternative text for this image may have been generated using AI.

a A tilted SEM image of the 1-μm-pitched grating for KFM observation is shown. The dashed line indicates the cleave direction. Scale bar, 1 μm. b A typical measured surface potential image is shown. The scan area was 1.5 μm × 1.5 μm. The MQW and Si-doped GaN positions were marked based on growth thickness. The etching bottom position was marked using the NBE etching depth obtained from SEM observation. Scale bar, 200 nm. c Surface potential as a function of distance from the edge of the NBE-etched (the red curve) and as-cleaved (the blue curve) reference samples. The small fluctuations marked by dashed circles are due to measurement artifacts.

Back to article page