Fig. 1: Bilayer graphene double quantum dot.
From: Coherent charge oscillations in a bilayer graphene double quantum dot
a False-color scanning electron microscopy image of the DQD device. The scale bar measures 500 nm. The split gates (SG) together with the back gate (not shown) are used to define a narrow conductive channel connecting the source (S) and drain (D) reservoirs (highlighted in blue). The channel is crossed by finger gates (see yellow structures) used to locally tune the band edges to form QDs. Our so-called finger gate left is connected to a bias tee which allow applying DC (VL) and AC voltages (VAC). The voltage VR is applied to the right finger gate. b Schematic of the conduction and valence band edge profile of the DQD highlighting the left and right finger gate, where VL and VR can be applied. c Charge stability diagram of the DQD at low electron occupation measured at a source-drain bias voltage of VSD = 0.5 mV.
