Fig. 3: Emulation of the key synaptic behaviors by a CuCrP2S6 memristor.
From: High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
a Potentiation and depression with different numbers of pulses. The applied voltage pulse sequences are shown in the bottom panel. b Emulation of the spike amplitude-dependent plasticity. The pulses with amplitudes of 0.4, 0.6, 0.8, and 1.0 V were applied. The conductance evolution of the device is shown in the top panel. The conductance increases with the pulse amplitude. The conductance maximum and minimum are extracted and plotted in the bottom panel. A large pulse amplitude enables the conductance to reach a higher level. c Spike rate-dependent plasticity. The pulses are set to be 1 V/300 ms, and the intervals between pulses are set as 0.4, 0.6, 1.1, 2.0, and 3.0 s. The pulse-rate dependence of the conductance maximum and minimum are extracted and plotted in the bottom panel. Insets of b and c show the variables (pulse–amplitude and pulse–time interval) in the measurements. d Cycling test for the potentiation/depression behaviors. Set/reset voltage: ±1 V; read voltage: 0.1 V.
