Fig. 2: Broken symmetries in BTG.
From: Gate-tunable anomalous Hall effect in Bernal tetralayer graphene
a Four-terminal resistance Rxx as a function of displacement field and carrier density at B = 1 T. Selected points in VM and FM regions are marked with blue unfilled polygons (upward triangle, downward triangle and star) and red filled polygons (square, diamond, and circle), respectively. See also Supplementary Fig. 2 where the same resistance plot is shown with filling fraction indicated. b Fast Fourier transform (FFT) of Rxx(1/B⊥) measured at the (n, D) points indicated by the corresponding symbols in three regions in a. Data are plotted in f = fB/(nϕ0), where fB is the oscillation frequency (measured in tesla) and ϕ0 = h/e is the magnetic flux quantum.
