Fig. 3: Anomalous Hall effect in BTG.
From: Gate-tunable anomalous Hall effect in Bernal tetralayer graphene
a Hall resistance (Rxy) as a function of magnetic field at specific (n, D) conditions. b Anomalous Hall resistance RAH extracted from background under specified condition. c Berry curvature distribution in momentum space of BTG under perpendicular displacement field (\(\Delta\)=30 meV). d Berry flux (upper panel) and derivative of Berry flux (lower panel) as a function of chemical potential at finite interlayer potential difference \(\Delta\)=30 meV. In both panel c and d, Berry curvature was calculated numerically and plotted using the same 8 band model for BTG as Fig. 1; a similar peaked form of the Berry curvature can also be obtained using an equal potential drop 8-band model for BTG, see Supplementary Information. e Anomalous Hall resistance as a function of magnetic field at different carrier densities while keeping displacement field constant (D = 0.3). Scale bar denotes 50 Ohm. n and D are in units of 1012 cm−2 and V nm-1, respectively. The (n, D) conditions are also denoted by cross symbols (‘X’) in the top part in Fig. 1c.
