Fig. 3: Trapped carrier concentration in pristine and surface-passivated FA0.99Cs0.01PbI3 devices. | Nature Communications

Fig. 3: Trapped carrier concentration in pristine and surface-passivated FA0.99Cs0.01PbI3 devices.

From: Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy

Fig. 3: Trapped carrier concentration in pristine and surface-passivated FA0.99Cs0.01PbI3 devices.

a \({{{{\triangle }}}}\,{{{{{{\rm{J}}}}}}}_{{{{{{\rm{IR}}}}}}}{{{{/}}}}{{{{{{\rm{J}}}}}}}_{{{{{{\rm{Pump}}}}}}}\) versus IR push intensity of a surface-passivated FA0.99Cs0.01PbI3 PeSC. The solid lines indicate the linearly fitted results. b Concentration of trapped carriers as a function of pump intensity. The solid lines indicate the fitted results according to Eq. 1. c \({{{{\triangle }}}}\,{{{{{{\rm{J}}}}}}}_{{{{{{\rm{IR}}}}}}}{{{{/}}}}{{{{{{\rm{J}}}}}}}_{{{{{{\rm{Pump}}}}}}}\) signal as a function of modulation frequency. The solid lines indicate the fitted results according to Eq. 2. d Arrhenius plot of the temperature-dependent trapped carrier concentration. The solid lines indicate the fitted results according to Arrhenius equation. The error bars represent the standard deviation of the data.

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