Fig. 1: Higher-order topological electronic properties and crystal structure of Bi4Br4.

a Schematic of electronic structures of Z2 topological insulators (TIs, left) and higher-order TIs (HOTIs, right). BCB: bulk conduction band; TSS: topological surface states; BVB: bulk valence band. b, c The crystal structure of Bi4Br4 from the approximately side view and the top view, respectively. d Cross-section image with atomic resolution measured with scanning transmission electron microscope (STEM). The crystal structure viewed along b is overlaid. e Schematic illustration of μ-ARPES measurements on the (001) and (100) surfaces of Bi4Br4 single crystal with hinge states along the edges of terraces. f Ab-initio calculation of the electronic structures of Bi4Br4. g, h (001) and (100) surface-projected band structures calculated along the chain direction, respectively.