Fig. 6: Filter analysis.

a, b Measured and de-embedded admittance responses of series and parallel resonators of F5 (Fig. 4a), c S₂₁ of the de-embedded resonators and of the filter F5, and d comparison between measured and reconstructed filters from the responses shown in c. The discrepancy in the responses likely derives from the impact of pads and interconnects' parasitics. e) Measured S₂₁ scattering parameters of a showcase filter as function of the input power. In f, the minimum IL degradation is plotted as function of the input power. The green region is the linear one, while the yellow indicates a input power region which causes a reversible IL degradation. The power levels in the red region cause irreversible device damage. In g, an SEM micrograph of the IDT fingers of the series resonator of the filter after experiencing 12 dBm of applied power. Electromigration is identified as IDTs breakdown mechanism.