Fig. 3: Self-aligned device with longer channel length.
From: Ultrashort vertical-channel MoS2 transistor using a self-aligned contact
a Cross-sectional schematic of strain in the folded heterostructure. R here is the curvature radius. b, c TEM image (b) and corresponding EDS mapping (c) of the thicker folded heterostructure. d, e Ids–Vgs transfer characteristics of thicker self-aligned device under negative bias region (d) and positive bias region (e). f Corresponding Ids–Vds output characteristics of the thicker self-aligned device.
