Fig. 4: Self-aligned contact device operated on the flexible substrate.
From: Ultrashort vertical-channel MoS2 transistor using a self-aligned contact
a, b Optical image (a) and photo (b) of a representative device transferred to the flexible substrate, the size of the PI substrate is 1 cm. c Ids–Vgs transfer characteristics of a self-aligned device on the flexible substrate under the strain of 5%. The bias voltages here is 10 mV (red), 100 mV (royal blue), 500 mV (yellow), 1 V (green), 2 V (slate blue) and 4 V (magenta), respectively. d Ids–Vds output characteristic of a self-aligned device on the flexible substrate under the strain of 5%. The gate voltages here is −5 V (black), -4 V (red), -3 V (blue), -2 V (green), -1 V (orchid), 0 V (dull gold), 1 V (dark cyan), 2 V (dark brown), 3 V (dark yellow), 4 V (orange-red) and 5 V (light blue), respectively.
