Fig. 2: Characterization of TB-MoS₂.

a Typical Raman spectra of monolayer and 101.3°-TB-MoS₂. The dashed lines represent the \({E}_{2g}^{1}\) and \({A}_{1g}\) peak positions of TB-MoS₂. b Raman intensity mapping for \({A}_{1g}\) mode of 101.3°-TB-MoS₂. c, d Raman mappings for position of maximum of 101.3°-TB-MoS₂ in the range around \({E}_{2g}^{1}\) and \({A}_{1g}\), respectively. e Typical photoluminescence (PL) spectra of monolayer and bilayer in 101.3°-TB-MoS₂, which is taken from the dots in panel (d). The dashed lines represent the A exciton position of TB-MoS₂. f, g PL intensity mapping for A exciton and B exciton of 101.3°-TB-MoS₂. h Atomic force microscope (AFM) image of typical 90.0°-TB-MoS₂. The dashed lines represent the orientation of the bottom (green) and top (red) layer, respectively. The height profile shows the thicknesses of monolayer and bilayer MoS₂. i, j High-resolution lateral force microscopy (LFM) raw image and corresponding fast Fourier transform pattern of the monolayer area in 90.0°-TB-MoS₂. k, l High-resolution LFM raw image and corresponding fast Fourier transform pattern of the bilayer area in 90.0°-TB-MoS₂. m Atomic-resolution LFM raw images of the monolayer and bilayer in 90.0°-TB-MoS₂ and corresponding schematic diagram of atomic lattice of 90.0°-TB-MoS₂. The insets illustrate the fast Flourier transform (FFT) patterns of atomic-resolution LFM raw images. Scale bars: 5 μm in (b)–(d) and (f)–(h), 5 nm in (i) and (k), 5 nm⁻¹ in (j) and (l), 1 nm in (m), and 5 nm⁻¹ in the inset of (m).