Fig. 2: Controlled synthesis and optoelectronics properties of ZST.

a, b TEM image (a) and EDS images (b) of ZST with Zn/Ti ratio of 1:1. c UV-vis absorption spectra of monomer ZnTPyP, ZS, and ZST. d PL spectra of ZnTPyP, ZS and ZST excited by 488 nm laser. e The open-aperture Z-scan signature of ZST at 850 nm fs laser. f TPL spectra of ZST excited by 850 nm fs laser. The insert image shows square dependence of luminescence on the excitation intensity. (The results are shown as mean ± SEM, n = 3). g The reflected laser excitation beam (label 1) and the excitation on the local sample area (label 2). h The common Gaussian distributions of spot 1 and 2 in (g). i Tauc plots of ZS with the insert bandgap energy. j Transient absorption spectroscopy for (I) ZS and (II) ZST obtained after 480 nm fs laser excitation. k Transient absorption spectra detected at 480 nm pump and probe 540 nm for ZS and ZST. Data are representative of at least three independent experiments with similar results.