Fig. 4: Electronic properties of the flattened NbSe2@CNT hetero-tube. | Nature Communications

Fig. 4: Electronic properties of the flattened NbSe2@CNT hetero-tube.

From: Ultrasmall single-layered NbSe2 nanotubes flattened within a chemical-driven self-pressurized carbon nanotube

Fig. 4: Electronic properties of the flattened NbSe2@CNT hetero-tube.The alternative text for this image may have been generated using AI.

a Representative cross-sectional ADF image of NbSe2 flat nanotube, where the outermost Se atoms are depicted with orange ellipses and the CNT is traced with red ellipses. Scale bars, 1 nm. b Average Se-C distance which was counted in CNTs of different inner diameters. The error bar arises from the slight difference in spacing along the major- and minor-axis directions. c Temperature-dependent resistance of unfilled CNT (red), NbSe2@CNT (blue), and NbSe3@CNT (purple) fibers. d Power-law relation of conductance G with temperature (G∼Tα) for two pure CNT samples from 10–100 K, obtaining a fitting exponent α = 0.64 from the red fitting curve. Inset, an optical image of CNT samples with the silver electrode deposited on the top of the samples. e Power-law relation for CNTs, NbSe3@CNT, and NbSe2@CNT from 2–10 K, giving a fitting exponent of 0.22, 0.18, and 0.32, respectively.

Back to article page