Fig. 5: Mechanism of giant IPVE in ReS2 GBs.
From: Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries
a Calculated density of states of ReS2 near GBs and pristine ReS2. b Schematic of band diagram of ReS2 near GBs. Quantum well structures are formed along the x-direction. The photo-excited electrons and holes are represented by filled and empty circles, respectively. The transport directions of these carriers are marked by black arrows. c The power-dependence of IPVE-induced photocurrent of GBs in ReS2 samples. Dashed lines serve as guidelines for linear and square-root dependence. d Wavelength-dependent photocurrents at ↑ and ↓ GBs. The calculated and experimental results at ↑ (↓) GBs are represented by blue (red) solid lines and dots, respectively. Error bars denote the standard deviation of the photocurrent measured at GBs.
