Fig. 2: De-doping oxygen dopants from OSCs and devices.
From: Unraveling the crucial role of trace oxygen in organic semiconductors
XRD spectra (a) and AFM images (b, c) of DNTT films before and after de-doping treatment, showing the non-destructive feature of the de-doping method. d UPS spectra at secondary electron cut-off region (left) and near the Fermi-level region (red) of the DNTT film before and after de-doping treatment, respectively. e Intensity of the TOF-SIMS data for the C, S, and O elements of the DNTT film before and after de-doping treatment, respectively. f Gradual removal of the p-type transfer characteristics of the DNTT OFET under de-doping treatment. Vds = −50 V. H2 plasma is used for these experiments. g Trap DOS of the OFET before and after plasma treatment extracted by FET method. h Energy band model of the OFET before and after de-doping. WD is the depletion layer width. TE and TFE denote thermionic emission and thermionic field emission, respectively. ΔEB is the height lowering of Schottky barrier induced by image charges.
