Fig. 4: DC characterization.
From: Sub-volt high-speed silicon MOSCAP microring modulator driven by high-mobility conductive oxide
a Normalized transmission spectra of the ITiO-gated MOSCAP Si-MRM with different gate biases. b Measured Q-factor (blue) and Δλres (orange) as a function of the gate bias. c Transmission at λMOD (1317.54 nm) with respect to the gate voltage. It biases at −1.9 V with 0.8 Vpp (−1.5 V to −2.3 V) to achieve an ER of 6 dB with an IL of 3 dB.
