Fig. 2: Gate-dependence of precession frequency and internal effective field. | Nature Communications

Fig. 2: Gate-dependence of precession frequency and internal effective field.

From: Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Fig. 2

a Frequency of oscillations as a function of external magnetic field, for different values of Δn. The circles are the frequencies extracted from the TRFE data for Δt > 26 ps. Solid lines are best fits of Eq (1). Inset: Close-up of the data for low fields, showing the frequency shift due to gating. The error bars are smaller than the markers. b Frequency of the oscillations in the TRFE signal at μ0Hext = 100 mT for various values of top (Vt) and back gate voltages (Vb). The black and gray arrows indicate, respectively, the directions of constant ΔD and varying Δn, and of constant Δn and varying ΔD. For other values of Hext see Supplementary Fig. 10. c Internal effective field as a function of Vt and Vb. d, e The dependence of the internal effective field on Δn for fixed ΔD (d) and on ΔD for fixed Δn (e), with solid lines to guide the eye. The traces are taken along the dotted lines indicated in (c).

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