Fig. 3: Gate dependence of magnetization precession amplitude and phase. | Nature Communications

Fig. 3: Gate dependence of magnetization precession amplitude and phase.

From: Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Fig. 3

a, b Gate dependence of the amplitude (a) and starting phase (b) of the oscillations in the TRFE measurements at μ0Hext = 100 mT. For other values of Hext see Supplementary Figs. 8 and 9. c, d External magnetic field dependence of the amplitude (c) and starting phase (d) of the oscillations for different values of Δn at ΔD = 0. The values are extracted from the TRFE data for Δt > 26 ps. The error bars indicate the standard deviation obtained from the least squares fitting procedure. e, Schematics of the inverse Cotton-Mouton effect for opposite directions of Hext. The magnetization direction is depicted by a red arrow, the external magnetic field in blue, the effective magnetic field induced by the ICME and the effective field are shown in cyan. The xz-plane is highlighted by the shaded region.

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