Fig. 2: Hysteresis and electrical properties of ITO FeFETs.
P-V loops of representative capacitors with a W/11.4 nm HZO /Ni and b W/11.4 nm HZO/3.4 nm ITO/Ni. The similar P-V characteristics suggest that the interface of FE and channel is excellent. c Measured ID-VG of ITO FeFETs exhibiting near-ideal S.S. value, high ION/IOFF ratio of 108, and sub-pA. gate/substrate leakage. d Measured ID-VD curve, showing high Ion of 105 μA/μm at VG = 3 V & VD = 0.1 V. e The S.S. distribution of ITO FeFETs devices, showing minimum S.S. of 33 mV/decade. f ID-VG curves for ITO FeFETs. A stable FE type hysteresis with MW up to 2.78 V is available. g Memory window (MW) versus VG, MAX of ITO FeFETs at VD = 0.1 V. MW is calculated as ΔVth in f. Record-high MW of 2.78 V at VG, MAX = 5 V. h Threshold voltages after erase and program versus VG Sweep range of ITO FeFETs at VD = 0.1 V. i Benchmarking of MW and ION/IOFF performance of FeFETs reported in this work (shown as a five-pointed star) versus recently reported FeFETs (shown as other symbols), where the MW is normalized with respect to the ferroelectric layer thickness.
