Fig. 3: Memory characteristics of ITO FeFETs. | Nature Communications

Fig. 3: Memory characteristics of ITO FeFETs.

From: High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Fig. 3

a The charge distribution and polarization states of the ultra-thin ITO channel FeFET in programming mode (above) and erasing mode (below). b Pulse sequence for endurance test used. Pulse width of erase and program processes are VP (3.8 V, 100 μs) and VE (−2 V, 100 μs). c Pulse sequence for retention test used. Pulse width of both erase and program processes are 500 μs with amplitude of 3.8 V. d Retention characterization of the ITO FeFETs. Optimized retention extrapolated as >10 years. at VD = 0.1 V. e Performance of the endurance property for the ITO FeFETs. High endurance exceeding 2 × 107 cycles. f Benchmarking the retention and endurance performance of FeFETs reported in this work (shown as five-pointed stars) against recently reported FeFETs (shown as other symbols).

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