Fig. 4: Non-volatile synaptic behavior of flexible ITO FeFETs. | Nature Communications

Fig. 4: Non-volatile synaptic behavior of flexible ITO FeFETs.

From: High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Fig. 4

a Schematic diagram of device flexibility testing. b The information transmission at biological synapses and corresponding artificial synaptic devices. c PPF under different bending cycles caused by paired pulses with a time interval of 500 ms. The inset is the PPF index extracted from the curve, constant at 141%. The transition from STM to LTM is achieved by changing the applied d pulse frequency and e pulse amplitude. f High-pass filtering characteristics of ITO FeFETs. g Learning behavior of ITO FeFETs. After 130 s of forgetting process, the FeFETs can reach the initial current level after only 27 same pulses revealing excellent memory retention. h The learning-forgetting process of ITO FeFETs under different bending radii of 5 mm and 7 mm. The inset presents the dependence of relaxation time on radius. i Relaxation time constant (τ) as a function of applied pulse parameters.

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