Fig. 5: Bending Reliability of ITO FeFETs. | Nature Communications

Fig. 5: Bending Reliability of ITO FeFETs.

From: High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Fig. 5

a Pulse sequence for Potentiation-depression cycling stress tests used. One cycle was 100 potentiating pulses and the subsequent 100 depressing pulses. All the currents were measured with an applied bias of −0.1 V on the postsynaptic neuron. b Repetitive LTP and LTD operations in the folded FeFETs during 50 K spikes of presynaptic pulses. c, d Show the LTP and LTD during the initial and final 5 cycles, respectively. e MNIST pattern recognition accuracy was evaluated by backpropagation (BP) algorithm. A high recognition accuracy close to the ideal was obtained in ITO FeFETs after applying 600 pulses and 48 K pulses. f Schematic diagram of the device’s bending strain. g–i Stress variation of the device during the bending process. The stress distribution on different functional layers was obtained through FEA simulation as the bending radius changed.

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