Fig. 3: Back-end integration of Sb2Se3 with an MRR for multilevel phase modulation. | Nature Communications

Fig. 3: Back-end integration of Sb2Se3 with an MRR for multilevel phase modulation.

From: Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Fig. 3

a Microscope image of the MRR. b Measured spectra of the reversible switching events. c Multilevel crystallization process (\(\Delta {{{{{\rm{T}}}}}}\) at 1551.145 nm) induced by applying PVAFD. The inset shows the zoomed-in error bar of two distinct states, which corresponding to the standard deviation of multiple transmission values in each level. d Multilevel crystallization process (\(\Delta {{{{{\rm{T}}}}}}\) at 1551.145 nm) induced by applying PVDFA. e Five hundred reversible switching events of the device. The transmittance change (\(\Delta {{{{{\rm{T}}}}}}\)) is the difference in optical power at 1551.513 nm.

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