Table 1 Comparison of memristor-based PUFs
From: Tunable stochastic memristors for energy-efficient encryption and computing
This work | Zhang et al.25 | Nili et al.26 | Jiang et al.27 | John et al.28 | Gao et al.30 | |
|---|---|---|---|---|---|---|
Device structure | Simple (CuxTe1-x/HfO2/Pt) | Simple (Au/Ag:SiO2/Au) | Complex (Pt/TiN/TiO2-x/ Al2O3/Pt/TiN/ TiO2-x/Al2O3/ Pt/TiO2/Al2O3) | Simple (Ta/HfO2/Pt) | Complex (Ag/PMMA/ PrPyr[PbI3]/ PEDOT:PSS /ITO) | Simple (TiN/TaOx/ HfOx/TiN) |
Bits per cell | 1 | 1 | 1/ # of rows | 0.5 | 0.5 | 1 (needs extra current source) |
PUF methodology | SET voltage variations | Device switchability based on Ag concentrations | I–V nonlinearity variations | LRS of neighboring cells | HRS of neighboring cells | HRS compared to a reference |
Uniqueness (%) | 50.62 | 50.68 | 49.96 | 50.06 | 49.02 | 50.52 |
NIST test | Passed | Not reported | Passed | Not reported | Passed | Passed |
Reconfigurability | Yes | No | Yes | Yes | Yes | No |
Concealability | Yes | No | No | No | No | Yes |
Nonvolatility | Yes | No | Yes | Yes | Yes | Yes |
Logic operation capability | Yes | No | No | No | No | No |
Implementable with passive nonvolatile crossbar | Yes | No | No | No | No | No |
