Fig. 1: Thermoelectric properties of p-type Te doped by various dopants.
From: Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te
a Temperature-dependent zT for polycrystalline Te doped with (green region) and without (red region) group VA elements (i.e., pnictogens: As, Sb, and Bi) (see Supplementary Fig. S1−S4 for more detailed transport properties). To enable univariate analysis, the content of dopants was uniformly set at 2% in this work, regardless of their difference in optimum doping level. Only compositions with experimental values in the literature are collected here3,8,10,11,12,56,57,59,67,76,77,78. b Room-temperature Hall carrier concentration (nH) for single-element-doped bulk Te systems containing pnictogens (green), compared with that of pristine Te and other non-pnictogen samples (red). Note that the optimal nH level is about 1 × 1019 cm−3 in Te thermoelectrics7.
