Fig. 2: EGT with reconfigurable characteristics for multimode sensing.
From: Reconfigurable optoelectronic transistors for multimodal recognition
a Schematic illustration of the neuromorphic transistor that can be stimulated using optical and electrical signals. The BaSnO3 film serves as a channel between the source (S) and drain (D) electrodes, and IL is used as the gating medium. b Short-term potential effect stimulated using optical pulses (1 s) with a 0.3 V bias to monitor the channel current. c Transition from short-term memory (STM) to long-term memory (LTM) under different light intensities. d Memory decay process after light pulse (70 mW/cm2 for 1 s) stimulation, fitted using a double-exponential function. The fitting result shows the coexistence of two physical processes. e Excitatory post synaptic current (PSC) induced via a train of optical pulse (70 mW/cm2, 1 s with intervals of 1, 5, 20, and 30 s) with a 0.3 V bias to monitor the channel current. f The channel current controlled through a series of VG pulse with a pulse width of 1 s and different amplitudes, +0.5 V, +1 V, +1.5 V and +2 V, which shows the transition of the PSC from volatile to non-volatile property. g Spike number-dependent plasticity under electrical stimuli (+2 V, 1 s) with the same intervals of 1 s. h Cyclic controlled LTP using VG (equally spaced from +1.5 to +3.5 V, duration of 1 s, spaced 1 s apart) and LTD using VG (equally spaced from −1.5 to −3.5 V, duration of 1 s, spaced 1 s apart) for 32 pulses.
