Fig. 5: Self-healable skin electronics.
From: Autonomous self-healing supramolecular polymer transistors for skin electronics
a Photograph of self-healing-transistor active-matrix arrays. b OM image and structure of a unit device of the array. c On-current mapping (VD, VG = −60 V) of a pristine array. d Transfer characteristics with different drain voltages (left) and output characteristics (right) of a single device in the active-matrix array. e On-current mapping of a 30% biaxially stretched active-matrix array. f C-AFM image of a semiconducting film at 30% biaxial strain. g On-current mapping of a healed active-matrix array with cross-shaped damage. h C-AFM image of a healed semiconducting film with a cutting line width of 3 μm. Photographs and circuit diagrams of stretchable and self-healing logic devices: (i), inverter, (j), NAND, and (k), NOR. l Voltage–transfer characteristics of an inverter at 0% (top-left), 30% biaxial strain (top-right), after cutting (bottom-left), and after healing (bottom-right). The inset illustrations show the drive and load transistors consisting of inverter devices at pristine (top-left) and under 30% biaxial strain (top-right). The drive transistor is cut using surgical blade (bottom-left) and it is autonomously healed (bottom-right). Output curves at 0% (top-left), 30% biaxial strain (top-right), after cutting (bottom-left), and after healing (bottom-right) from (m), NAND and (n), NOR logic devices. The width and depth of cuts on all of the drive transistors were ~ 4 μm and 2 μm, respectively.
