Fig. 3: Microstructure and polarization evolution after in-situ biasing.
From: Atomic-level polarization reversal in sliding ferroelectric semiconductors
HAADF-STEM images (left) and corresponding atomic positions of Se (right, identified by Calatom software) of InSe:Y before (a) and after (b) in-situ biasing process, showing obvious electric field induced ripplocation formation and motion but without any atomic rearrangement of each single layer (left, inset). The arc arrows in (b) roughly mark the position where the ripplocation occurs. c SAED patterns of InSe:Y before (upper) and after (lower) in-situ biasing process. d Polar map (upper) of (d) with the arrows only showing the polarization directions (from anion to cation) with the schematic (lower) showing the influence of the ripplocation on the polarization switching. e, f Atomic-level zoom-in HAADF-STEM images marked with the polarization directions (upper) in (d) together with the simulated ones (lower) of two unit-cells of γ-InSe with totally reversed layer stacking and polarization states.
