Fig. 1: TeSeO synthesis and microstructure characterization.
From: An inorganic-blended p-type semiconductor with robust electrical and mechanical properties
a Schematic of p-type TeSeO semiconducting system containing group 16 elements. b GIXRD patterns and c AFM images of TeSeO thin films with different compositions. Insets of b display the corresponding sample photographs. Inset of c shows the corresponding roughness values of TeSeO thin films based on root-mean-square deviation (Rq) and arithmetic-mean deviation (Ra). d Cross-sectional HRTEM image of Te0.7Se0.3O0.59 thin film. e SAED patterns of TeO1.16, Te0.7Se0.3O0.59, and Te0.5Se0.5O0.32 thin films.
