Fig. 4: Nanopatterned TeSeO and broadband photodetection.
From: An inorganic-blended p-type semiconductor with robust electrical and mechanical properties
a SEM images of the nanosphere lithography process consisting of nanosphere assembly, size reduction, TeSeO deposition, and nanosphere lift-off. b–f Broadband UV-vis-SWIR operation of flexible nanopatterned TeSeO photodetectors with a chopped frequency of 0.2 Hz. g Optical responsivity of TeSeO with different compositions under various incident light wavelengths.
