Table 1 Energies and dipole moments of Ci center charge states and modifications

From: Programmable quantum emitter formation in silicon

Defect

Zero-phonon line (ZPL) (meV)

Spin channel

Squared transition dipole moment (TDM) (Debye2)

Relative shift (meV)

Ci center (−1)

571

Down

0.169 × 10−5

+2

Ci center (0)

569

N/A

0.337 × 10−5

 

Ci center (+1)

568

Down

0.482 × 10−8

−1

Ci center “B” (0)

655

N/A

0.118

+86

Ci + H Type 1 (0)

1032

Down

0.29 × 10−2

+463

 

528

Up

0.483

−41

Ci + H Type 1 (+1)

611

N/A

0.632

+42

Ci + H Type 2 (0)

847

Down

0.28 × 10−2

+278

 

559

Up

0.721

−10

Ci + H Type 2 (+1)

581

N/A

0.633

+12

Ci + H Type 3 (0)

1174

Down

2.52

+578

 

592

Up

0.902 × 10−4

+23

Ci + H Type 3 (+1)

591

N/A

2.20

+22

  1. Computed ZPL and squared transition dipole moment (TDM) for different charge states and structural modifications of the Ci center in Si. For defects with a spin degree of freedom, the spin channel for the transition is indicated. The final column gives the ZPL deviation for each defect relative to the neutral Ci center.
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