Fig. 1: P-i-N waveguide emitter.
From: Broadband near-infrared emission in silicon waveguides
a Device schematic, b fabricated p-i-n waveguide emitter device, c measured I–V curves for p-i-n waveguides with intrinsic widths of din = 400 nm and 800 nm, d narrowband infrared (IR) grating emission from a din = 800 nm intrinsic region p-i-n waveguide under forward-bias, e broadband IR grating emission under reverse-bias. The optical microscope image in (b) has been adjusted for color temperature.
