Fig. 1: Quantum wells of hex-Ge/Si0.2Ge0.8.
From: Direct bandgap quantum wells in hexagonal Silicon Germanium
a Schematic illustration of the GaAs/Si0.2Ge0.8/Ge/Si0.2Ge0.8 core-multishell nanowires. All interfaces are orthogonal to \(\langle 1\overline{1}00\rangle\) directions. b Schematic band alignment of the different materials. The electrons and holes are confined in the hex-Ge layer due to type-I alignment with the surrounding hex-Si0.2Ge0.8, as will be proven in this manuscript. Approximate values of the bandgap and offsets are given. c 30-degree tilted scanning electron micrograph of a NW array. Within these NWs, a (12 ± 3) nm Ge/Si0.2Ge0.8 QW is embedded.
