Fig. 4: OAN spiking frequency and energy.
From: Unravelling the operation of organic artificial neurons for neuromorphic bioelectronics
Spiking frequency (\({f}_{{{{{{\rm{spike}}}}}}}\), left axis and circle symbols) and energy per spike (\({E}_{{{{{{\rm{spike}}}}}}}\), right axis and triangle symbols) as a function of the OAN parameters. \({E}_{{{{{{\rm{spike}}}}}}}={P}_{{{{{{\rm{OAN}}}}}}}/{f}_{{{{{{\rm{spike}}}}}}}\), where \({P}_{{{{{{\rm{OAN}}}}}}}\) is the power consumption. \({f}_{{{{{{\rm{spike}}}}}}}\) and \({E}_{{{{{{\rm{spike}}}}}}}\) are computed as a function of (a) threshold voltage of T1 \({V}_{{{{{{\rm{TH}}}}}}1}\), b threshold voltage of T2 \({V}_{{{{{{\rm{TH}}}}}}2}\), c normalized transconductance of T1 \({g}_{{{{{{\rm{m}}}}}}1}\), d normalized transconductance of T2 \({g}_{{{{{{\rm{m}}}}}}2}\), e volumetric capacitance of T1 \({C}_{{{{{{\rm{v}}}}}}1}\), f volumetric capacitance of T2 \({C}_{{{{{{\rm{v}}}}}}2}\), g resistance \({R}_{1}\), and h resistance \({R}_{2}\).
