Table 2 Overview of artificial spiking neurons

Material	Phenomena	Neuron topology	Components (#)	Neuron in-liquid ion-sensing and bio-interfacing	Spiking frequency (Hz)	Power consumption (µW)	Ref.
Silicon	Electronic	Multi-component IC	Multi-T	No	~1–270	75 × 10⁻³	⁶⁵
Silicon	Electronic	SOI MOSFET	1T	No	~1–800	~22 × 10⁻³	¹
Silicon	Electronic	Bi-stable resistor	1T, 1C	No	~1–350	NA	⁵⁰
Metal-oxide	Mott MIT	Diode-like, NDR	2D, 2R, 2C-3C, 2 V_int	No	~5 × 10³–50 × 10³	2	⁶⁶
Metal-oxide	Mott MIT	Diode-like, NDR	1D, 1R, 1C	No	~30 × 10³–70 × 10³	NA	¹⁶
Metal-oxide	Mott MIT	Diode-like, NDR	1D	No	~2 × 10⁶–9 × 10⁶	NA	⁶⁷
Organic	Electronic	Diode-like, NDR	1D	No	~2 × 10⁶–9 × 10⁶	NA	⁶⁸
Organic	Iono-electronic	Transistor, inverter	4T, 1R, 1C	Yes	80	60	³⁵
Organic	Iono-electronic	Transistor-like, NDR	2T, 2R, 1C	Yes	5–55	24	³⁴

Artificial spiking neurons providing biophysical realism capabilities (viz. emulation of real neuron spiking behavior). Spiking neurons fabricated with various materials, underling the key phenomena, the neuron circuit topology, and the number of components. The comparison includes the ability of neurons to perform in-liquid ion-sensing and bio-interfacing, with biochemical-dependent spiking activities. Finally, spiking frequency, power consumption, and biophysical realism, viz. the ability to emulate realistically the electrical response of biological neurons, are provided.
NDR negative differential resistance, IC integrated circuit, SOI silicon on insulator, MOSFET metal-oxide-semiconductor field-effect transistor, T transistor, C capacitor, R resistor, D diode, NA not available.

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