Fig. 5: Representative 2D materials with high carrier mobility.

a Crystal structures of group V binary compound AB (A = As/Sb, B = Bi/P), similar to black phosphorus. Electronic structure of (b) PSb and (c) BiAs, the gray dashed line is the electronic of black phosphorus (BP) and the red arrow describes the band edge shift after replacing phosphorus. The band color represents elemental contribution, indicated by colored text. d Crystal structures of group IV-V binary compound AB2 (A = Sn/Ge, B = Bi/Sb). e Electronic structure of GeSb2, and the gray boxes point out the band edges. f, g Detailed electronic structures of GeSb2 at band edges along different directions. More details about their band gap, effective mass, and deformation potential can be found in Table 1 and Supplementary Table 4. The structure files are provided in Supplementary Data 1.