Fig. 1: Preparation and characterizations of graphene-skinned alumina fiber (GAF). | Nature Communications

Fig. 1: Preparation and characterizations of graphene-skinned alumina fiber (GAF).

From: Graphene-skinned alumina fiber fabricated through metalloid-catalytic graphene CVD growth on nonmetallic substrate and its mass production

Fig. 1: Preparation and characterizations of graphene-skinned alumina fiber (GAF).

a Schematic of GAF prepared via chemical vapor deposition (CVD) process, and the structure of AF consisting of ~72% γ-Al2O3 and ~28% amorphous SiO2 (a-SiO2). b X-ray diffraction (XRD) patterns of pristine AF and the annealed AF at ~1050 °C for ~2 h. c Photograph of AF (left) and GAF (right). d, e SEM image (d) and Raman mapping (e) of GAF in c. f Raman spectra from 10 evenly-spaced positions on GAF as marked in c. g Atomic force microscope (AFM) image of graphene ribbon obtained after etching AF core of GAF in c, the height profile showed the height value was ~2.6 nm. h, i High resolution-transmission electron microscope (HR-TEM) image of 3-layer graphene on AF (h), and corresponding selected area electron diffraction (SAED) patterns (i). Growth conditions in c-i: 500 sccm Ar, 200 sccm H2, 20 sccm CH4, target temperature of ~1050 °C, growth time of ~80 min, see more details in “Methods” section.

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